Abstract
ABSTRACTExtra space charges are generated in the drift region due to the avalanche multiplication process and space charge effect of IMPATT (impact ionization and avalanche transit time) diode reduces the efficiency of the devices. The disturbances in electric field, drift voltage, and space charge resistance represent the space charge effect. In this paper, a comparative study of these disturbances has been presented for silicon, germanium, gallium arsenide, indium phosphide, WzGaN (wurtzite gallium nitride), 4H-SiC (silicon carbide) semiconductor materials-based double drift region (DDR) IMPATT diode at Ka-band as well as the cause of poor efficiency in the diode highlighted. This will be helpful for the selection of the suitable material for optimum design of DDR IMPATT diode as well as to improve the DC to radio frequency (RF) power conversion efficiency.
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