Abstract
Germanium and silicon monocrystals with grown-in artificial medium-angle grain boundaries and isolated edge dislocations are subjected to a scanning electron beam (SEB) with simultaneous application of a bias field in a transverse direction. Amplification of the induced current signal yields oscillograms clearly revealing the polar character of defects and the junction behavior of a two-dimensional array of edge dislocations. These results can be explained on account of the dislocation model, as discussed earlier, and support studies and conclusions with respect to the influence of the space charge of edge dislocations on carrier transport in crystals.
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