Abstract
We report space-and-time current spectroscopy for characterization of wide-gap semiconductors. The approach is based on the illumination of semiconductor material with an oscillating interference pattern formed of two light waves, one of which is phase modulated with frequency ω. The non-steady-state photocurrent flowing through the short-circuited semiconductor is the measurable quantity in this technique. The alternating current results from the periodic relative shifts of the photoconductivity and space charge electric field gratings which arise in the volume of the crystal under illumination. The experiments are carried out in photorefractive n-type Bi12SiO20, molecular SnS2 and pyrolytic crystal of BN and the main parameters of the photoinduced carriers are determined.
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