Abstract
In this paper, a new source-all-around tunnel field-effect transistor (SAA-TFET) is proposed and investigated by using TCAD simulation. The tunneling junction in the SAA-TFET is divided laterally and vertically with respect to the channel direction which provides a relatively large tunneling junction area. An n+ pocket design is also introduced around the source to enhance tunneling rates and improve the device characteristics. In addition, the gate and n+ pocket region also overlap in the vertical and the lateral directions resulting in an enhanced electric field and, in turn, the ON-state current of the SAA-TFET is highly increased compared with the conventional TFET. Promising results in terms of DC (ION, IOFF, ON/OFF current ratio and SS) and analog (cutoff frequency) performance are obtained for low (VDD = 0.5 V) and high (VDD = 1 V) supply voltages.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
