Abstract
The silicon-on-sapphire (SOS) pseudo-MOSFETs with high-k buried hafnium dioxide interlayer (IL) were investigated after the hydrogen induced Si and HfO2 layer transfer on c-sapphire wafers and annealing at 600–1100 °C. HRTEM, GIXRD and Raman measurements were used to reveal the hafnia phases for furnace and rapid thermal annealings (FA and RTA).
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