Abstract
While several approaches have been developed for sorting metallic (m) or semiconducting (s) single-walled carbon nanotubes (SWCNTs), the length of SWCNTs is limited within a micrometer, which restricts excellent electrical performances of SWCNTs for macro-scale applications. Here, we demonstrate a simple sorting method of centimetre-long aligned m- and s-SWCNTs. Ni particles were selectively and uniformly coated along the 1-cm-long m-SWCNTs by applying positive gate bias during electrochemical deposition with continuous electrolyte injection. To sort s-SWCNTs, the Ni coating was oxidized to form insulator outer for blocking of current flow through inner m-SWCNTs. Sorting of m-SWCNTs were demonstrated by selective etching of s-SWCNTs via oxygen plasma, while the protected m-SWCNTs by Ni coating remained intact. The series of source-drain pairs were patterned along the 1-cm-long sorted SWCNTs, which confirmed high on/off ratio of 104–108 for s-SWCNTs and nearly 1 for m-SWCNTs.
Highlights
While several approaches have been developed for sorting metallic (m) or semiconducting (s) single-walled carbon nanotubes (SWCNTs), the length of SWCNTs is limited within a micrometer, which restricts excellent electrical performances of SWCNTs for macro-scale applications
We demonstrated a sorting method of centimetre-long m-SWCNTs and s-SWCNTs from the horizontally aligned SWCNT array on substrate synthesized by chemical vapor deposition (CVD)[30]
The resistance of SWCNT is lowest at the edge of electrolyte solution with respect to counter electrode (CE) and gradually increases with the SWCNT located at the inner side of electrolyte solution
Summary
While several approaches have been developed for sorting metallic (m) or semiconducting (s) single-walled carbon nanotubes (SWCNTs), the length of SWCNTs is limited within a micrometer, which restricts excellent electrical performances of SWCNTs for macro-scale applications. Carbon nanotube computer was recently demonstrated utilizes aligned SWCNTs9, challenges still exist for macro-scale application of SWCNTs. One significant challenge is a mixture of metallic (m) and semiconducting (s) SWCNTs. Numerous techniques have been developed for sorting of m-SWCNTs and s-SWCNTs; electrical breakdown[16], dynamic supramolecular coordination chemistry[17], H-bonded supramolecular polymer[18,19], selective etching by gas-phase reaction[20], light irradiation[21], dielectrophoresis[22], DNA-assisted dispersion and separation[23], ultra-centrifugation-based separation[24], selective chemical functionalization[25,26], and thermocapillary flows[27,28]. We demonstrated a sorting method of centimetre-long m-SWCNTs and s-SWCNTs from the horizontally aligned SWCNT array on substrate synthesized by chemical vapor deposition (CVD)[30]
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