Abstract
Pb0.92Sn0.08Te layers have been grown by hot-wall and liquid-phase epitaxy techniques. In the hot-wall epitaxy case, layers are grown on BaF2 and Pb0.92Sn0.08Te single-crystal substrates, while in the case of liquid-phase epitaxy, single crystals of PbTe and Pb0.92Sn0.08Te are used. In both cases x-ray Laue diffraction studies indicated the growth of good quality epilayers suitable for device fabrication.
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