Abstract
Abstract Thin layers of FeSi2 deposited at room temperature have an amorphous structure. These layers show a phase transformation into crystalline β-FeSi2) on heating to high temperature. The electrical behaviour of amorphous layers is more similar to that of the metallic high-temperature phase (α-FeSi2) than to that of the semiconducting one (β-FeSi2). Intrinsic absorption in amorphous and polycrystalline layers has also been investigated. The observed properties of the amorphous and crystalline layers are interpreted in terms of a crude band model.
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