Abstract
Some recent contributions to the understanding of radiative and nonradiative recombination in semiconductors will be reviewed. These include theories of impurity energy levels, undulation spectra in GaP, optical properties of the resonant N level in GaAs1−xPx, quantum effects of carriers confined to thin layers, nonradiative capture by multiphonon emission and recombination-enhanced defect motion.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
