Abstract
The very low frequency dielectric constant in Cu2O varies over wide limits and is highly temperature dependent. At sufficiently low temperatures the dielectric constant for all samples reduces to the high frequency value of about 7.5. Small variations in the high frequency value are easily explained as being due to the known presence of copper crystals embedded in the semiconducting material. The low frequency and temperature variations will be related to the variation in the depletion layer formed around each copper inclusion. Calculations are based on highly oversimplified size, shape, and distribution of the copper inclusions.
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