Abstract
Continuous-random-network models have been constructed for the Si–SiO2 interface. It is found that an abrupt interface with no SiOx layer is posible. A simple tight-binding model is described that is applicable for the calculation of the electronic properties of the bulk oxides and the oxide–semiconductor interfaces. Results are given only for selected bulk properties, namely the photoemission and x-ray emission spectra, and the dielectric constants of SiO2, GeO2, and various ABO4-type oxides.
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