Abstract
A preparatory technique for InP films is described. The composition, surface feature and structural characterizations of the as-deposited films indicated the formation of InP but with poor surface morphology. Annealing appears to change the surface topography and shows no improvement in the quality of the film. The optical and electrical studies of the as-deposited films showed them to be an n-type semiconductor with a band gap of 1.35 eV.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
