Abstract
Electrical and optical properties of silica films obtained by RF sputtering both with and without oxygen ambient have been investigated. The resistivity of a typical film without oxygen ambient is found to be about 2×1016Ω cm at room temperature and the activation energy is estimated to be 1.6 eV in the temperature range from 200°C to 400°C. Small quantity of oxygen gas results in an appreciable reduction of deposition rate. With increasing the oxygen partial pressure, the values of ε' and tan δ are found to increase and the absorption peak near 9.3µ shifts to longer wave lengths. These results are considered to be explained in terms of a change in film composition caused by oxygen ambient.
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