Abstract
The authors investigate the physical properties of gapless semiconductors of the second kind, i.e., substances in which the conduction band is in direct contact with the valence band and the energy exhibits a square-law dependence on the momentum in the vicinity of the contact point in all branches of the spectrum in the one-electron approximation. The methods normally applied to strong-coupling field theories (“scaling”) are used to analyze the singular energy-momentum domain in which the Coulomb carrier interaction becomes strong and intractable by perturbation theory. The surface impedance, conductivity, susceptibility in weak and strong fields, and the Hall coefficient are calculated. Some possible experimental approaches are explored.
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