Abstract
a-Ga1−xAsx films containing small GaAs crystallites were prepared by flash evaporation onto low-temperature glass substrates. The As content in the films was varied from 41 to 69 at.%. Thermoelectric power measurements indicate that Ga-rich films are n-type and As-rich films are p-type, but the Seebeck coefficients for samples near the stoichiometric ratio were too small to measure. The optical gaps vary with As content in a way that is consistent with the suggestion that the material appears to be an alloy of a-GaAs and the excess component. High-temperature activation energies place the Fermi level near midgap in all samples and this is in line with the suggestion that this class of materials tend to self compensate as the film grows.
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