Abstract
AbstractElectrooptical effects are investigated for n‐GaAs(Cr) at the field strengths E ⪅ 3 × 104 V/cm, photon energies 0.5 < hv < 1.5 eV and temperatures 10 < T < 80 K. The oscillatory structure of appreciable amplitude is found at 10 < T < 40 K in the spectral regions of extrinsic (due to Cr impurity) and intrinsic absorption. The structure observed agrees with the concept of Wannier levels; the oscillations occur at hv > I and at hv > I (I — impurity ionization energy) and the oscillation period linearly depends on E. At T > 40 K the structure is smeared out due to acoustic phonons. A tentative discussion is given concerning the apparent inefficiency of random fields in smoothing the structure corresponding to Wannier levels.
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