Abstract
To clarify and comprehend the interfacial compatibility of single crystal superalloy and ceramic core, the interface reaction of nickel-based single crystal superalloy CMSX-4 and silicon oxide ceramic core during directional solidification is investigated. The results revealed that a continuously distributed Al2O3 layer is formed at the interface of superalloy / silicon oxide ceramic core. Moreover, it is also found that a discontinuously distributed Ta/Ti enrichment carbide layer, (Ta/Ti)C, is formed at the interface of Al2O3 layer/superalloy. The formation mechanism of interface reaction between the nickel-based single crystal superalloy and silicon oxide ceramic core is analyzed.
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