Abstract
A flexible cantilever method has been used to measure stress in films of tantalum, tungsten, molybdenum, chromium, nickel, copper and gold deposited by low pressure sputtering in argon. In all cases the stress was compressive. With tantalum, tungsten and molybdenum stress values of over 100 kgf/mm2 were found under some conditions. A detailed study of the stress in tantalum films indicates the importance of the part played by residual gases. Tantalum oxide films formed by reactive sputtering have been found to have a low tensile stress.
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