Abstract
The anodic oxides on metal‐organically grown GaAs have been investigated by Auger and secondary ion mass spectroscopy (SIMS). The surface of the oxide was found to contain carbon contamination amounting to ∼7 at.%. The carbon contamination was no longer detectable after Auger sputter profiling for 0.6 min (at a rate of 40 Å/min for Ta2O5). Carbon contamination to similar depth on the surface was also observed on freshly etched GaAs. Auger analysis results show a Ga to As atomic ratio of 6:1 for the oxide. As the oxide/GaAs interface is approached, the As concentration increases sharply. The SIMS spectra of the surface and the bulk of the oxide does not show the presence of Ga2O3 and As2O3, believed to be the main constituents of anodic oxides, but peaks corresponding to GaO and AsO and elemental Ga and As are observed. This is probably due to decomposition of Ga2O3 and As2O3 because of argon ion bombardment.
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