Abstract
In contrast to single barrier photodiode structures, multibarrier ones exhibit the effect of increasing the number of photogenerated carriers in the entire range of operating voltages, whereas the photocurrent generation in avalanche and injection photodiodes is characterized by the threshold behavior and is associated with changes in the dark carrier density. The suggested interpretation of the effect of internal photoelectric amplification will make it possible to estimate experimental current or voltage gains and detect photoelectric amplification in photodiode structures irrespective of their type.
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