Abstract
AbstractThe concentration and temperature dependence of the ESR linewidth in n‐Ge and n‐InSb and spin–lattice relaxation times in Ge: As have been investigated in the X‐band. ESR line narrowing and the increase of the spin‐lattice relaxation rate with concentration in the low concentration range are explained by overlap of the donor electron wave functions. In the high concentration range the ESR data are compared with the theories of the spin relaxation of conduction electrons.
Published Version
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