Abstract
The article is concerned with the investigation of techniques of the post-treatment of porous silicon. To study the features of changing the composition of the chemical bonds of the surface of porous silicon, we used the method of infrared spectroscopy.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
