Abstract
The pulse-height defect (PHD) in semiconductor surface-barrier silicon detectors has been measured for (8–17) MeV 19F, (4–18) MeV 27Al, (7–25) MeV 40Ca and (6–38) MeV 58Ni ions. Ions have been obtained by elastic scattering of 252Cf spontaneous-fission fragments on the appropriate scatters. Simultaneous measurement of the semiconductor detector response and the time of flight for a given ion make it possible to determine PHD for every event. The results are discussed under assumption that there is a very thin surface layer that can account for the origin of the main part of the PHD.
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