Some Electrophysical Properties of Polycrystalline Silicon Obtained in a Solar Oven

Lutfiddin Omanovich Olimov,Iqboljon Ibroximovich Anarboyev

doi:10.1007/s12633-021-01596-1

Abstract

The article describes the results of the study of the microstructure and some electrophysical properties of silicon obtained by re-melting in a solar oven. It was found that the granularity of polycrystalline silicon consists of Si atoms with a size of 10–15 μm, the roughness of its surface. It is shown that at T ≤ 600 K the concentration of charge carriers increases due to an increase in the concentration of ionized impurity atoms, which, in turn, leads to a decrease in the resistivity of polycrystalline silicon. The position at T ~ 600–700 K is based on the decrease in the free path of the charge carriers as a result of thermal vibrations of the crystal lattice. The situation at T ≥ 700 K was explained by the emergence of new recombination centers specific to localized traps. Polycrystalline silicon heated by sunlight does not create a barrier effect of traps localized in the grain boundary regions from polycrystalline silicon obtained by other methods. This can expand the possibilities of creating highly efficient semiconductor devices, solar cells, thermoelectric materials for micro- and nanoelectronics, photovoltaics.

Highlights

At present, the electrophysical and photoelectric properties of polycrystalline silicon semiconductors in the field when creating relatively inexpensive and resistant to external influences semiconductor devices, solar cells, thermoelectric materials can be considered sufficiently well studied from both experimental and theoretical points of view
The article describes the results of the study of the microstructure and some electrophysical properties of silicon obtained by re-melting in a solar oven
Polycrystalline silicon heated by sunlight does not create a barrier effect of traps localized in the grain boundary regions from polycrystalline silicon obtained by other methods

Summary

Introduction

The electrophysical and photoelectric properties of polycrystalline silicon semiconductors in the field when creating relatively inexpensive and resistant to external influences semiconductor devices, solar cells, thermoelectric materials can be considered sufficiently well studied from both experimental and theoretical points of view (see, for example, [1,2,3,4,5,6,7,8,9,10,11], as well as the links given there). Localized traps or segregated impurity atoms in the grain boundary regions create a barrier effect that leads to shunting of the pn junction [1,2,3,4,5,6,7,8,9,10], and this simultaneously leads to a deterioration in the efficiency of semiconductor devices or solar cells In this regard, one of the important tasks is the study of technologies for the development of polycrystalline semiconductor materials and the study of physical processes associated with grain boundary regions. This work is devoted to solving this problem for polycrystalline silicon obtained by heating in a solar oven using powder technology

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