Some electrical properties of thin Yb 2O 3 films produced by different technological methods

Abstract

Results obtained from investigations of the electrical conductivity and the permittivity of Yb 2O 3 films in MIM structures are presented. Thin films of Yb 2O 3 were produced by four different methods: the evaporation of Yb 2O 3 by an electron beam, the evaporation of Yb 2O 3 from tungsten heaters, the reactive evaporation of ytterbium in oxygen and the evaporation of thin ytterbium films followed by their oxidation in air. The structure of both amorphous and polycrystalline Yb 2O 3 films and their electrical properties were found to depend on the conditions under which the films were obtained (ε = 7−50; ϱ ≈ 10 9−10 12 Ω m) .