Abstract
The inhomogeneous structures investigated in the present work were obtained by implantation of silver ions in low-resistivity (p ~ 0.i-i.0 ~.cm and Wn 2 600 cm2/V.sec at 300~ cadmium selenide crystals which had been subjected to chemical and mechanical polishing followed by etching. The silver ions were implanted at room temperature with energy 350 keV and in doses of 2.10 z~, 7"10 I~, and 2"10 ~5 ions/cm 2. After implantation of the silver the specimens were annealed in a stream of inert gas (Ar) under an Si02 masking layer i000 thick in the temperature range 300-500~ for 20 min. Before the measurements the Si02 layer was removed and gold and indium contacts were deposited on the doped and undoped sides, respectively, of the specimens.
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