Abstract
The electrical and photoelectric characteristics of the p-Cu2ZnSnS4/n-Si heterojunctions that are promising for the creation of solar cells, were studied. The conclusion about the current flow in such heterostructures was made based on the temperature dependence of the CVC. At low direct voltage, the dominant mechanism of the current transfer is tunnel-recombination processes, and at high voltages (3kT/e < U < 0.6 V), the dominant mechanism is tunneling one. In the case of a reverse bias, the main mechanism of charge transport is single-step tunneling through a potential barrier. A characteristic feature of the photo-CVC characteristic is the presence of the photoresponses in both branches of the characteristics.
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