Abstract
Hydrogenated silicon carbide films (SiC:H) were deposited using the electron cyclotron resonance plasma chemical vapour deposition (ECR-CVD) method from a mixture of methane, silane and hydrogen, with diborane as the doping gas. The effect of changes in the percentage of the diborane to reactant gas mixture on the deposition rate, optical bandgap and photoconductivity were investigated. There is evidence from Raman scattering analysis to show that films deposited at a low microwave power of 150 W were all amorphous and the bandgap decreased as the diborane fraction increased whereas films deposited at a high microwave power of 800 W at low diborane fractions are photoconductive and contain microcrystalline silicon inclusions. These films became amorphous as the diborane fraction was increased, while the optical bandgap remains relatively unaffected throughout the entire range of diborane fractions investigated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
