Abstract
A differential to single-ended convertor stage suitable for N-channel depletion-mode GaAs MESFET implementation is modified to allow increased gain. This enhanced input stage is combined with two different high-gain stages to yield two operational amplifier designs suitable for switched capacitor applications. A new procedure for characterising amplifiers in terms of settling time is presented and applied to the above designs. It reveals the ultimate speed limitation for a given amplifier design and allows the MESFET gate widths to be scaled to obtain optimum settling behaviour for any given capacitative load.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.