Abstract
Collection efficiency for carriers generated by visible light and potential path distributions have been studied in p-i-n structures formed from p-type silicon after compensation by the lithium drift method. The experimental results show that the characteristics of the resultant devices are similar to those expected when an excess donor concentration excists in the compensated region. The effects of high-field, reverse-bias, room-temperature storage indicate that a reduction in the donor concentration takes place under these conditions, resulting in a device behaving more like a p-i-n structure.
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