Abstract
Layers of n-type with thickness in the range of 0.0002 in. over areas of 0.006 sq in. have been produced on intrinsic germanium wafers by an alloy regrowth process as one stage in the fabrication of transistors. Experiments show that satisfactory alloying requires proper choice of solvent and doping impurity, good wetting of solvent to germanium, avoidance of contamination, good orientation of the germanium surface to the (111) plane, proper temperature cycle, and an inverted temperature distribution in the melt. Details are given of the process now in use in which lead is the solvent and antimony the doping impurity.
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