Abstract
Cu/Te/CdTe multilayers prepared entirely by r.f. sputtering on silicon substrates are investigated using grazing incidence X-ray diffraction (GIXD) and X-ray photoelectron spectroscopy (XPS) techniques. Migration of cadmium atoms from the CdTe layer to the free surface is observed when the films are annealed at 450 K. This migration is accompanied by the diffusion of copper and tellurium into the CdTe layer, leading to segregation of these two elements at the CdTe/Si interface.
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