Solvothermal synthesis of boron-doped graphene and nitrogen-doped graphene and their electrical properties

Abstract

In this work, pristine graphene, nitrogen-doped graphene and boron-doped graphene were synthesized by a facile solvothermal process using potassium or lithium nitride as catalyst. The formation mechanism of graphene and doped graphene was discussed, and the chlorine gas generated during the reaction performed a significant role. High yield of graphene and doped graphene can be produced via the solvothermal route with relatively mild conditions, and X-ray photoelectron energy spectroscopy analysis confirmed the doping status and concentration of nitrogen or boron within graphene sheets. Especially, electrical properties of graphene-based field effect transistors revealed that the introduction of nitrogen or boron atoms into graphene sheets can effectively tailor electrical property of graphene from conducting characteristics to semiconducting behaviors.