Solvothermal approach for low temperature deposition of aluminium oxide thin films

Abstract

At elevated pressure, stoichiometric and high quality Al 2O 3 thin films are fabricated at 65–105 °C. By using pre-organised single source precursor aluminium(III) diisopropylcarbamate, Al 2O 3 were deposited on the surface of a Si substrate in a single step in the liquid phase. Comprehensive removal of large carbamate ligands by proposed β-elimination during decomposition of precursor led to an effective delivery of enshrouded Al–O fragments. Scanning electron microscopy revealed dense and grainy surface morphology. The thicknesses of the films were measured to be 150–300 nm and independent to reaction temperatures or reaction times. Through the use of near edge X-ray absorption fine structure spectroscopy, Al absorption peaks suggest a short range crystalline formation in a film deposited at 105 °C.