Abstract
The transient characteristics of electric double layer (EDL) gated field-effect transistors with Si as an active semiconductor were studied using various electrolyte solutions of LiBF4 by applying a step-function voltage to determine the optimum electrolyte for semiconductor circuits using EDLs. The tR, determined by EDL dynamics in the present experiment, was minimum as a function of the kind of solvent used owing to the competing effects of the EDL thickness and viscosity. The responses of the electrolyte solutions with various solvents at the same concentration were classified into three categories on the basis of tR: slow response of a complex-forming solvent, intermediate response of protic solvents, and fast response of nonprotic solvents. The best response time was 55 µs when a 1.0 M acetonitrile solution was used as the liquid-gate insulator.
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