Solution-processed ZnO thin films for low voltage and low temperature application in flexible resistive random access memory

Abstract

The demand for flexible resistive random access memories (ReRAM) has increased because wearable devices, such as smart watches, e-paper, and flexible displays, have become a trend. These devices have advantages such as portability, light weight, and user-friendly interfaces, which are better than the currently available rigid electronic systems. A flexible nonvolatile memory is an essential part of electronic systems. In this study, zinc oxide (ZnO) thin films were used for fabricating ReRAM devices. The fabrication was achieved by a simple solution processing method and low temperature annealing (approximately 100°C) on a hot plate. In addition, the devices fabricated on polyimide substrates showed excellent operational characteristics with a high ratio (≥104) of the high resistance state to the low resistance state. The operational voltage of the ZnO ReRAM devices was <2V, and the reset operational voltage was less than −1V.