Solution‐processed oxide thin‐film transistors using aluminum and nitrate precursors for low‐temperature annealing

Abstract

Abstract— In this article, a solution process for oxide thin‐film transistors (TFTs) at low‐temperature annealing was investigated. Solution‐process engineering, including materials and precursors, plays an important role in oxide thin‐film deposition on large glass and flexible substrates at low temperature. Reactive material could reduce the alloy reaction temperature for a multicomponent oxide system. A volatile precursor could also reduce annealing temperature in the formation of metal‐oxide thin films. A solution process with reactive Al and a volatile nitrate precursor can demonstrates competitive oxide TFTs at 350°C.