Abstract
Flexible organic field-effect-transistor (OFET) memory is one of the promising candidates for next-generation wearable nonvolatile data storage due to its low price, solution-processability, light-weight, mechanically flexibility, and tunable energy level via molecular tailoring. In this paper, we report flexible nonvolatile OFET memory devices fabricated with solution-processed polystyrene-brush electret and organic semiconductor blends of p-channel 6, 13-bis-(triisopropylsilylethynyl)pentacene (TIPS-PEN) and n-channel poly-{[N,N′-bis(2- octyldodecyl)-naphthalene-1,4,5,8-bis-(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} (P-(NDI2OD-2T); N2200). Fabricated flexible OFET memory devices exhibited high memory window (30 V) and ON/OFF current ratio (memory ratio) over 103. Furthermore, we obtained reliable memory ratio (~103) over retention time of 108 s, 100 times of repeated programming/erasing cycles, and 1000 times of bending tests at a radius of 3 mm.
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