Abstract
Dioctylbenzothieno[2,3-b]benzothiophene (C8-BTBT)-based organic field-effect transistors (OFETs) with a top-gate configuration, having fluoropolymer gate insulators, are fabricated by means of a spin-coating technique. The device fabrication is simple, and it enables us to obtain C8-BTBT FETs having high field-effect mobility (µFET), low threshold voltage (Vth), and high electrical stability. We fabricate 116 top-gate C8-BTBT FETs having µFET of 1.59±0.40 cm2 V-1 s-1 and Vth of -1.48±3.02 V, and the maximum µFET is approximately 3 cm2 V-1 s-1. No changes in the devices characteristics are observed after applying a negative gate bias stress of -1.2 MV/cm for 104 s.
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