Solution synthesis of stannous sulfide and stannic disulfide quantum dots for their optical and electronic properties

Abstract

Quantum dot devices have been viewed as one of solutions for the next step in the development of integrated circuit. Two-dimensional (2D) layered semiconductors such as tin sulfide (SnS) and tin disulfide (SnS2) are promising materials for fabricating quantum dots (QDs) devices. However, the challenges in the synthesis of QDs with pure phases severely limit applications in such fields. In this work, uniform SnS and SnS2 QDs were synthesized via a convenient and facile ultrasonic method. TEM and AFM images confirmed the morphology of the SnS and SnS2 QDs. The optical characteristics of the QDs were obtained via UV–vis absorption and Raman spectroscopy. Finally, volt-current measurements of devices fabricated using the SnS and SnS2 QDs were carried out. Our results demonstrate the potential of SnS and SnS2 QDs for optical and electronic applications.