Abstract
The demand for flexible resistive random access memories (ReRAM) has increased because wearable devices, such as smart watches, e-paper, and flexible displays, have become a trend. These devices have advantages such as portability, light weight, and user-friendly interfaces, which are better than the currently available rigid electronic systems. A flexible nonvolatile memory is an essential part of electronic systems. In this study, zinc oxide (ZnO) thin films were used for fabricating ReRAM devices. The fabrication was achieved by a simple solution processing method and low temperature annealing (approximately 100°C) on a hot plate. In addition, the devices fabricated on polyimide substrates showed excellent operational characteristics with a high ratio (≥104) of the high resistance state to the low resistance state. The operational voltage of the ZnO ReRAM devices was <2V, and the reset operational voltage was less than −1V.
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