Abstract
Pseudo-cubic perovskite La-doped SrSnO3 has been proposed as a promising alternative for ultra-violet (UV) transparent conductors due to its favorable electrical transport properties and UV transparency. However, the difficulty in fabricating large-size La-doped SrSnO3 films with high electrical mobility continues to hinder the development of practical applications. In this work, Sr0.94La0.06SnO3 (SLSO) thin films with wide bandgap of ∼4.5 eV were fabricated by using solution deposition route. Emphasis was placed on creating oxygen-poor environments and selecting appropriate post-annealing temperatures, which were determined based on the kinetic energy of relevant defects and second-phase impurities. Post-annealing treatment was applied to refine the microstructure and enhance electrical transport properties. As a result, a relatively high carrier mobility of 25.9 cm2 V−1 s−1 and a low resistivity of 1.15 mΩ cm at a carrier concentration of 2.08 × 1020 cm−3 were achieved. Enhanced electrical properties were attributed to the increased presence of oxygen vacancies, as confirmed by electron paramagnetic resonance results. This study presents a straightforward approach for the production of large-scale epitaxial UV transparent conducting SLSO thin films.
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