Abstract

Successive ionic layer adsorption and reaction (SILAR) method is one of the easiest methods to grow the quantum dots (QDs) on porous oxides for solar cell applications. In this work CdSe quantum dot sensitized solar cells (QDSSCs) were fabricated. On FTO substrate, mesoporous TiO 2 layer was deposited. This TiO 2 layer was sensitized by in-situ synthesis and deposition of CdSe QDs. CdSe QDs were deposited by SILAR method. The QDs were grown on TiO 2 by dipping the TiO 2 electrode in two different precursor solutions of two different ions for defined times. Cationic precursor solution of Cd+2 ion was prepared by 0.5M Cd(NO 3 ) 2 in ethanol and anionic precursor solution of Se-2 was prepared by 0.5M SeO 2 in ethanol. Quantum confinement effect was observed with each dipping (SILAR) cycle.

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