Abstract
A solution-processed polymer near-infrared photodetector with charge blocking layers is reported using a low-bandgap polymer, poly[(4,4'-bis(2-ethylhexyl)dithieno [3, 2-b:2',3'-d]silole)-2,6-diyl-alt-(2,1,3-benzothiadiazole)4,7-diyl]. Zinc oxide nanoparticles and poly[(9,9'-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butyl))diphenylamine)] are used as a hole blocking layer and an electron blocking layer, respectively. A maximum detectivity of 2 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> Jones is achieved with a 330-nm-thick photoactive layer that absorbs 98% of the incident light at 780 nm.
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