Abstract
The letter reports lead free all-inorganic perovskite based resistive switching (RS) memory devices. The cesium tin bromide (CsSnBr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) perovskite films were prepared by the solution deposition technique. The memory devices exhibit bipolar resistive RS characteristic and light assisted multilevel storage capability. The proposed devices show a maximum ON/OFF ratio of ~ 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> , data retention of ~ 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> s, and endurance of 400 cycles. We explain the resistive switching effect on lights of the formation and rupture of a conducting path under an electric field. This work may provide an opportunity to develop transparent, flexible, and multibit storage capacity photonic resistive memory devices based on all-inorganic perovskites for successful logic application.
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