Abstract
In the present work, efficient Solution-processed green light-emitting diodes based on a phosphorescent emitter with wide bandgap host are reported. A maximum efficiency of 25 cd/A was obtained using the green emitter tris[2-(p-tolyl)pyridine]iridium(III) blended with diphenyl-4-triphenylsilylphenyl-phosphine oxide as the emission layer. The maximum luminance exceeded 10,000 cd/m2, indicating that by simply blending a wide bandgap host with a phosphorescent emitter, efficient electroluminescence with a simplified device structure can be obtained.
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