Solution-Processed Inorganic Thin Film Transistors Fabricated from Butylamine-Capped Indium-Doped Zinc Oxide Nanocrystals

Abstract

Indium-doped zinc oxide nanocrystals (IZO NCs), capped with stearic acid (SA) of different sizes, were synthesized using a hot injection method in a noncoordinating solvent 1-octadecene (ODE). The ligand exchange process was employed to modify the surface of IZO NCs by replacing the longer-chain ligand of stearic acid with the shorter-chain ligand of butylamine (BA). It should be noted that the ligand-exchange percentage was observed to be 75%. The change of particle size, morphology, and crystal structures were obtained using a field emission scanning electron microscope (FE-SEM) and X-ray diffraction pattern results. In our study, the 5 nm and 10 nm IZO NCs capped with stearic acid (SA-IZO) were ligand-exchanged with butylamine (BA), and were then spin-coated on a thermal oxide (<TEX>$SiO_2$</TEX>) gate insulator to fabricate a thin film transistor (TFT) device. The films were then annealed at various temperatures: <TEX>$350^{\circ}C$</TEX>, <TEX>$400^{\circ}C$</TEX>, <TEX>$500^{\circ}C$</TEX>, and <TEX>$600^{\circ}C$</TEX>. All samples showed semiconducting behavior and exhibited n-channel TFT. Curing temperature dependent on mobility was observed. Interestingly, mobility decreases with the increasing size of NCs from 5 to 10 nm. Miller-Abrahams hopping formalism was employed to explain the hopping mechanism insight our IZO NC films. By focusing on the effect of size, different curing temperatures, electron coupling, tunneling rate, and inter-NC separation, we found that the decrease in electron mobility for larger NCs was due to smaller electronic coupling.