Solution-Processed, High Performance Aluminum Indium Oxide Thin-Film Transistors Fabricated at Low Temperature

Abstract

Thin-film transistors (TFTs) with aluminum indium oxide channel layers were fabricated via a simple and low cost solution process. The substitution of Al on In sites in the In 2 O 3 lattice was verified by X-ray diffraction analysis. The maximum heat-treatment temperature of these transistors was 350°C, and the resultant thin films were highly transparent (with >90% transmittance). The fabricated TFTs operated in an enhancement mode on a positive bias and showed an n-type semiconductor behavior. They exhibited a channel mobility of 19.6 cm 2 /V s, a subthreshold slope of 0.3 V/decade, and an on-to-off current ratio greater than 10 8 .