Abstract
Surfactant-assisted exfoliated graphene (SAEG) has been implemented in transparent conducting graphene films which, for the first time, were used to make SAEG–silicon Schottky junctions for photovoltaics.
Highlights
Chemical doping resulted in a further 300% increase of the peak power conversion efficiency (PCE). These results indicate that surfactant-assisted exfoliated graphene (SAEG) has the potential to compete with chemical vapour deposited graphene in graphene–silicon Schottky junction applications
In the last decade nanocarbon–silicon heterojunctions have been investigated for their photovoltaic properties, speci cally carbon nanotube–silicon (CNT–Si)[1] and graphene–silicon (G–Si).[2]
Wei et al.[3] were the rst to report a CNT–Si heterojunction in 2007. They used chemical vapour deposition (CVD) to grow a double-walled carbon nanotube lm, a er which the lm was suspended in distilled water and picked up on a prepatterned n-type silicon substrate to create a p(CNT)–n(Si) junction
Summary
In the last decade nanocarbon–silicon heterojunctions have been investigated for their photovoltaic properties, speci cally carbon nanotube–silicon (CNT–Si)[1] and graphene–silicon (G–Si).[2] Wei et al.[3] were the rst to report a CNT–Si heterojunction in 2007. They used chemical vapour deposition (CVD) to grow a double-walled carbon nanotube lm, a er which the lm was suspended in distilled water and picked up on a prepatterned n-type silicon substrate to create a p(CNT)–n(Si) junction. These holes are generated as a result of charge separation at the CNT–Si interface, in which the CNTs are an active layer
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