Abstract
We have designed and investigated electrical and optical properties of solution-processed organic field-effect transistors (OFETs) based on conjugated polymer PFO and perovskite –cesium lead halide nanocrystals (CsPbI3) composite films. It was shown that OFETs based on PFO:CsPbI3 films exhibit current-voltage (I-V) characteristics of OFETs with dominant hole transport and saturation current behavior at temperatures 200–300 K. It was found that PFO:CsPbI3 OFETs have a negligible hysteresis of output and transfer characteristics especially at temperatures below 250 K. The values of the hole mobility estimated from I-Vs of PFO:CsPbI3 OFETs were found to be ∼2.4 10−1 cm2/Vs and ∼1.9 10−1 cm2/Vs in saturation and low fields regimes respectively at 300 K; the hole mobility dropped down to ∼6 10−3 cm2/Vs and 2.8 10−3 cm2/Vs respectively at 200 K, and then down to 5.5 10−5 cm2/Vs at 100 K (in low field regime), which is characteristic of hopping conduction. The effect of sensitivity to light and light-emitting effect were found under application of negative source-drain and gate pulse voltages to PFO:CsPbI3 OFETs at 300 K. The mechanism of charge carrier transport in OFETs based on PFO:CsPbI3 hybrid films is discussed.
Published Version
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